page1of5 semiconductor 10pt series rohs rohs stansard scrs, 10a symbol i t rms ( ) rms on state current full sine wave i tsm non repetitive surge peak on state current full cycle t initial = 25 c) ( , j a i t 2 i t value for fusing 2 50 a s 2 di dt / critical rate of rise of on state current 50 i gm peak gate current p g av ( ) average gate power dissipation t stg storage temperature range operating junction temperature range 40 + 150 to 40 + 125 to oc a s / aa w unit value 100 105 f=50hz f=60hz t=20ms t=16.7ms t =10ms p f=60hz t =125oc j t =125oc j t =125oc j t =20s p t j absolute maximum ratings parameter test conditions main features symbol value unit i t(rms) v /v drm rrm i gt 10 a v ma 15 600 to 1000 description v 600 to1000 t =125oc j v drm v rrm repetitivepeakoffstatevoltage repetitivepeakreversevoltage (180conductionangle) 4 1 averageonstatecurrent (180conductionangle) i t av ( ) a 1 2 3 1 2 3 2 2 2 1 2 3 to-220ab (non-lnsulated) to-251 (i-pak) to-252 (d-pak) i = 2xl , t ns g gt r 100 1 2 3 to-220ab (lnsulated) (10ptxxf) (10ptxxg) (10ptxxa) (10ptxxai) (g)3 1(a1) (a2) 2 www.nellsemi.com to251/to252/to220ab to220abinsulated tc=100c tc=90c maximumgatepower p gm w 10 t =20 p s the10ptseriesofsiliconcontrolledrectifiersarehigh performance glass passivated technology, and are designed for power supply up to 400hz on resistive or inductiveload. t =125oc j to220abinsulated tc=100c tc=90c 6.4 10 to251/to252/to220ab
page2of5 semiconductor 10pt series rohs rohs note : xx voltage = 10ptxxxx unit i gt v gd i h ma dv dt / v tm i drm i rrm ma i l v =12v,r =30 d l v =v ,r =3.3k d drm l r =220,t =110c gk j i =100ma,gateopen t i =1.2 i g gt v =67%v , gateopen,t =110c d drm j 1.3 0.2 30 50 200 ma vv ma v/s i =20a, t t =380s p t =110c j t =25c j t =25c j v a electrical specifications ( t j = 25 ) unless otherwise specified oc, test conditions symbol v =v ,v =v d drm r rrm 1.6 10 2 r =220 gk max. max. min. max. min. min. max. max. max. 15 thermal resistance r th j c ( ) junction to case dc ( ) r th j a ( ) junction to ambient 2.5 70 c/w c/w unit value symbol parameter v gt www.nellsemi.com s 70 t q t =110c j typ. v =67%v , i ,v =25v d drm r tm =12a di =30a/ dv /dt=50v/ tm d s, s product selector part number voltage x x ( ) sensitivity 600 v a 15 m 1000 v 10ptxxa/10ptxxal 10ptxxf 10ptxxg v v 800 v v package to220ab dpak v v v v v v ipak a 15 m a 15 m ordering information 10ptxxa 10ptxxa ordering type marking package weight base q , ty delivery mode to220ab 2.0g 50 tube 10ptxxai 10ptxxai 2.3g 50 tube 10ptxxf 10ptxxf to251(ipak) 0.40g 80 10ptxxg 10ptxxg 0.38g 80 tube to252(dpak) to220ab(insulated) tube 100 60 ipak/dpak/to220ab s=0.5cm2 dpak ipak to220ab s=coppersurfaceundertab
page3of5 semiconductor rohs rohs 10pt series ordering information scheme scr series package type current voltage code a to220ab(noninsulated) = ai to220ab(insulated) = 10=10a,i t(rms) 10 pt 06 06=600v f=to251(ipak) g=to252(dpak) 08=800v www.nellsemi.com 10=1000v fig.1 maximum average power dissdipation versusaverageonstatecurrent fig.2 correlation between maximum average powerdissipationandmaximum allowabletemperature(t andt ) amb lead 8 7 6 5 4 3 2 1 0 9 0 2 10 4 8 6 12 0 12 2 10 4 8 6 0 20 40 60 80 100 120 140 p w ( ) p w ( ) t (c) lead dc =90 =60 =120 =30 =180 tamb( c) =180 r th =6 c/w r th =4 c/w r th =2 c/w r th =0 c/w 125 120 115 110 105 100 i t(av) (a) 360
semiconductor rohs rohs page4of5 i ,i ,i [t ]/i ,i ,i [t =25 c] gt h l gt h l j j 10pt series www.nellsemi.com fig.5 relative variation of gate trigger current junction temperature versus fig.8 onstate characteristics (maximum values) 10 100 1 2 5 10 fig.6 surge peak onstate current versus number of cycles 2.5 80 1 10 100 1000 i (a) tsm 100 2 1.5 1 0.5 0 0 10 20 30 40 50 60 70 80 90 100 110 20 30 10 40 60 40 20 0 i (a),i2t(a2s) tsm fig.7 nonrepetitive surge peak onstate current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of l2t i (a) tm 1 2 4 3 5 1 100 1000 fig.3 average onstate current versus case temperature fig.4 relative variation of thermal impedance versuspulseduration 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1 0.1 0.01 1 e-3 1 e-2 1 e-1 1 e+0 1 e+1 1 e+2 5e+2 i (av)(a) t k=[z /r ] th(jc) th(jc) t case (c) =180 dc 12 10 to220ab to251/to252 to220ab insulated t p (s) z th(jc) z th(ja) t j (c) i gt i &i h l numberofcycles tjinital=25c tp=10ms onecycle 120 t p (ms) i2t i tsm tjinital=25 c v (v) tm t j=max v =0.82v t0 rd=24m t j=max t j=25c 0 10
semiconductor rohs rohs 10pt series rohs 1 2 2 3 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) to-252 (d-pak) case style page5of5 (g)3 1(a1) (a2) 2 www.nellsemi.com 4t 6.4(0.52) 6.6(0.26) 5.2(0.204) 5.4(0.212) 1.5(0.059) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) to-251 (i-pak) 2.87 (0.113) 2.62(0.103) 9.40(0.370)9.14(0.360) 10.54(0.415) . max 16.13(0.635) 15.87 (0.625) pin 4.06(0.160)3.56(0.140) 1.45(0.057)1.14(0.045) 2.67(0.105)2.41(0.095) 2.65(0.104)2.45(0.096) 5.20 (0.205)4.95 (0.195) 0.90(0.035)0.70 (0.028) 3.91(0.154)3.74(0.148) 1 3 2 4.70(0.185) 4.44 0.1754 ( ) 1.39(0.055) 1.14 (0.045) 3.68(0.145)3.43(0.135) 8.89(0.350)8.38(0.330) 29.16(1.148) 28.40 (1.118) 14.22(0.560)13.46(0.530) 0.56(0.022)0.36(0.014) 2.79(0.110) 2.54(0.100) 15.32(0.603)14.55(0.573) to-220ab
|
